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INFINEON  IRF7820PBF  MOSFET Transistor, N Channel, 3.7 A, 200 V, 0.0625 ohm, 10 V, 4 V

INFINEON IRF7820PBF
Technical Data Sheet (214.75KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IRF7820PBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for notebook processor power and isolated DC-to-DC converters.
  • Low gate charge
  • Very low static drain-to-source ON-resistance at 10V gate-to-source voltage

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
3.7A
Drain Source Voltage Vds:
200V
On Resistance Rds(on):
0.0625ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
2.5W
Transistor Case Style:
SOIC
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Computers & Computer Peripherals;
  • Communications & Networking

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Philippines

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000175