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INFINEON  IRFB31N20DPBF  MOSFET Transistor, N Channel, 31 A, 200 V, 82 mohm, 10 V, 5.5 V

INFINEON IRFB31N20DPBF
INFINEON IRFB31N20DPBF
Technical Data Sheet (290.71KB) EN See all Technical Docs

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INFINEON IRFB31N20DPBF
INFINEON IRFB31N20DPBF

Product Overview

The IRFB31N20DPBF is a 200V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
  • Low gate to drain charge to reduce switching loss
  • Fully characterized capacitance and avalanche SOA
  • Surface mount

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
31A
Drain Source Voltage Vds:
200V
On Resistance Rds(on):
0.082ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
5.5V
Power Dissipation Pd:
200W
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Philippines

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002

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