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INFINEON  IRFB4710PBF  MOSFET Transistor, N Channel, 75 A, 100 V, 14 mohm, 10 V, 5.5 V

INFINEON IRFB4710PBF
INFINEON IRFB4710PBF
Technical Data Sheet (663.24KB) EN See all Technical Docs

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INFINEON IRFB4710PBF
INFINEON IRFB4710PBF

Product Overview

The IRFB4710PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.
  • Fully characterized capacitance including effective COSS to simplify design
  • Fully characterized avalanche voltage and current

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
75A
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
0.014ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
5.5V
Power Dissipation Pd:
200W
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Motor Drive & Control

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002

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MOSFET Transistor, N Channel, 97 A, 100 V, 0.008 ohm, 10 V, 4 V

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