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INFINEON  IRFB7430PBF  MOSFET Transistor, N Channel, 195 A, 40 V, 0.001 ohm, 10 V, 2.2 V

INFINEON IRFB7430PBF
Technical Data Sheet (253.74KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IRFB7430PBF is a 40V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. The StrongIRFET™ HEXFET® power MOSFET is suitable for battery powered circuits, synchronous rectifier applications, half-bridge and full-bridge topologies.
  • Improved gate, avalanche and dynamic dv/dt ruggedness
  • Fully characterized capacitance and avalanche SOA
  • Enhanced body diode dV/dt and dI/dt capability
  • Halogen-free

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
195A
Drain Source Voltage Vds:
40V
On Resistance Rds(on):
0.001ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2.2V
Power Dissipation Pd:
375W
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Motor Drive & Control

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00195