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VISHAY  IRFP150PBF  MOSFET Transistor, N Channel, 41 A, 100 V, 55 mohm, 10 V, 2 V

VISHAY IRFP150PBF
Technical Data Sheet (1.44MB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IRFP150PBF is a HEXFET® third generation N-channel Power MOSFET provide the designer with the best combination of fast switching, ruggedized device design and low ON-resistance. The package provides greater creepage distances between pins to meet the requirements of most safety specifications.
  • Dynamic dV/dt rating
  • Repetitive avalanche rating
  • Isolated central mounting hole
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
41A
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
0.055ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2V
Power Dissipation Pd:
230W
Transistor Case Style:
TO-247AC
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
To Be Advised

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Applications

  • Commercial;
  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Mexico

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00567

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