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INFINEON  IRFP4468PBF  MOSFET Transistor, N Channel, 290 A, 100 V, 2 mohm, 20 V, 4 V

INFINEON IRFP4468PBF
Technical Data Sheet (296.71KB) EN See all Technical Docs

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Product Overview

The IRFP4468PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
  • Improved gate, avalanche and dynamic dv/dt ruggedness
  • Fully characterized capacitance and avalanche SOA
  • Enhanced body diode dV/dt and dI/dt capability

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
290A
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
0.002ohm
Rds(on) Test Voltage Vgs:
20V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
520W
Transistor Case Style:
TO-247AC
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.006

Associated Products