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INFINEON  IRFR1018EPBF  MOSFET Transistor, N Channel, 56 A, 60 V, 7.1 mohm, 20 V, 4 V

INFINEON IRFR1018EPBF
Technical Data Sheet (368.77KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IRFR1018EPBF is a N-channel HEXFET® Power MOSFET with high speed power switching and high frequency circuits.
  • Dynamic dv/dt rating
  • Fully avalanche rated

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
56A
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
0.0071ohm
Rds(on) Test Voltage Vgs:
20V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
110W
Transistor Case Style:
TO-252
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Mexico

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000631

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