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INFINEON  IRFR2607ZPBF  MOSFET Transistor, N Channel, 42 A, 75 V, 22 mohm, 10 V, 4 V

INFINEON IRFR2607ZPBF
Technical Data Sheet (336.41KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IRFR2607ZPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
  • Advanced process technology
  • Repetitive avalanche allowed up to Tjmax

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
42A
Drain Source Voltage Vds:
75V
On Resistance Rds(on):
0.022ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
110W
Transistor Case Style:
TO-252
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Y-Ex
Tariff No:
85412900
Weight (kg):
.001058

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