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INFINEON  IRFR3410PBF  MOSFET Transistor, N Channel, 31 A, 100 V, 39 mohm, 10 V, 4 V

INFINEON IRFR3410PBF
Technical Data Sheet (285.21KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IRFR3410PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
  • 175°C Operating temperature
  • Dynamic dV/dt rating
  • Fully avalanche rated

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
31A
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
0.039ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
110W
Transistor Case Style:
TO-252
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Y-Ex
Tariff No:
85412900
Weight (kg):
.0004

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