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INFINEON  IRFR6215PBF  MOSFET Transistor, P Channel, 13 A, -150 V, 295 mohm, -10 V, -4 V

INFINEON IRFR6215PBF
Technical Data Sheet (241.74KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IRFR6215PBF is a -150V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapour phase, infrared or wave soldering techniques.
  • Advanced process technology
  • Fully avalanche rated
  • 175°C Operating temperature

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
13A
Drain Source Voltage Vds:
-150V
On Resistance Rds(on):
0.295ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-4V
Power Dissipation Pd:
110W
Transistor Case Style:
TO-252
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Y-Ex
Tariff No:
85412900
Weight (kg):
.0004

Associated Products