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INFINEON  IRFTS8342TRPBF  MOSFET Transistor, N Channel, 8.2 A, 30 V, 0.015 ohm, 10 V, 1.8 V

INFINEON IRFTS8342TRPBF
Technical Data Sheet (214.31KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IRFTS8342TRPBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-DC and AC-to-DC converters.
  • Fully characterized capacitance and avalanche SOA
  • Enhanced body diode dV/dt and di/dt capability
  • Industry standard pin-out

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
8.2A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.015ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1.8V
Power Dissipation Pd:
2W
Transistor Case Style:
TSOP
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Motor Drive & Control;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000033

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