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INFINEON  IRG4BC10UDPBF  IGBT Single Transistor, IRG4, 8.5 A, 600 V, 38 W, 600 V, TO-220AB, 3 Pins

INFINEON IRG4BC10UDPBF
Technical Data Sheet (187.66KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IRG4BC10UDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for high operating up to 80kHz in hard switching, >200kHz in resonant mode. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation. IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations.
  • High efficiency

Product Information

DC Collector Current:
8.5A
Collector Emitter Saturation Voltage Vce(on):
600V
Power Dissipation Pd:
38W
Collector Emitter Voltage V(br)ceo:
600V
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Lighting;
  • Alternative Energy;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Mexico

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002041

Associated Products

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