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IRG4BC30FD-SPBF - 

IGBT Single Transistor, 31 A, 1.8 V, 100 W, 600 V, TO-263, 3 Pins

IRG4BC30FD-SPBF - IGBT Single Transistor, 31 A, 1.8 V, 100 W, 600 V, TO-263, 3 Pins

Image is for illustrative purposes only. Please refer to product description.

Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
IRG4BC30FD-SPBF
Order Code:
1013521
Technical Datasheet:
(EN)
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Product Overview

The IRG4BC30FD-SPBF is an Insulated Gate Bipolar Transistor with hyper-fast diode. It is optimized for medium operating frequencies 1 to 5kHz in hard switching, >20kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3. The IGBT co-packaged with HEXFRED® ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. The HEXFRED® diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing.
  • Optimized for specific application conditions
  • Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs

Applications

HVAC, Consumer Electronics, Alternative Energy, Power Management

Product Information

:
31A
:
1.8V
:
100W
:
600V
:
TO-263
:
3Pins
:
150°C
:
-
:
-
:
MSL 1 - Unlimited
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