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INFINEON  IRG4BC30FD-SPBF  IGBT Single Transistor, 31 A, 1.8 V, 100 W, 600 V, TO-263, 3 Pins

INFINEON IRG4BC30FD-SPBF
Technical Data Sheet (1.19MB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IRG4BC30FD-SPBF is an Insulated Gate Bipolar Transistor with hyper-fast diode. It is optimized for medium operating frequencies 1 to 5kHz in hard switching, >20kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3. The IGBT co-packaged with HEXFRED® ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. The HEXFRED® diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing.
  • Optimized for specific application conditions
  • Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs

Product Information

DC Collector Current:
31A
Collector Emitter Saturation Voltage Vce(on):
1.8V
Power Dissipation Pd:
100W
Collector Emitter Voltage V(br)ceo:
600V
Transistor Case Style:
TO-263
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • HVAC;
  • Consumer Electronics;
  • Alternative Energy;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Mexico

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.003931

Associated Products

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