Low

INFINEON  IRG7PH42UPBF  IGBT Single Transistor, 90 A, 1.7 V, 385 W, 1.2 kV, TO-247AC, 3 Pins

INFINEON IRG7PH42UPBF
Technical Data Sheet (291.22KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IRG7PH42UPBF is an Insulated Gate Bipolar Transistor suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses. It features rugged transient performance for increased reliability and excellent current sharing in parallel operation.
  • Low VCE (ON) Trench IGBT technology
  • Low switching losses
  • Square RBSOA
  • 100% of Parts tested for ILM
  • Positive VCE (ON) temperature coefficient
  • Tight parameter distribution
  • High efficiency in a wide range of applications

Product Information

DC Collector Current:
90A
Collector Emitter Saturation Voltage Vce(on):
1.7V
Power Dissipation Pd:
385W
Collector Emitter Voltage V(br)ceo:
1.2kV
Transistor Case Style:
TO-247AC
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Alternative Energy;
  • HVAC;
  • Consumer Electronics;
  • Motor Drive & Control;
  • Maintenance & Repair

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Mexico

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.006

Associated Products

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