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INFINEON  IRL2203NPBF  MOSFET Transistor, N Channel, 100 A, 30 V, 7 mohm, 10 V, 1 V

INFINEON IRL2203NPBF
INFINEON IRL2203NPBF
Technical Data Sheet (186.43KB) EN See all Technical Docs

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INFINEON IRL2203NPBF
INFINEON IRL2203NPBF

Product Overview

The IRL2203NPBF is a 30V single N-channel Advanced HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The power MOSFET is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
  • Advanced process technology
  • Ultra low on-resistance
  • Dynamic dV/dt rating
  • Fast switching
  • Fully avalanche rated
  • 175°C Operating temperature

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
100A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.007ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1V
Power Dissipation Pd:
130W
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
South Korea

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002041

Associated Products