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INFINEON  IRL2505PBF  MOSFET Transistor, N Channel, 104 A, 55 V, 8 mohm, 10 V, 2 V

INFINEON IRL2505PBF
INFINEON IRL2505PBF
Technical Data Sheet (223.14KB) EN See all Technical Docs

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INFINEON IRL2505PBF
INFINEON IRL2505PBF

Product Overview

The IRL2505PBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
  • Logic level gate drive
  • Advanced process technology
  • Dynamic dV/dt rating
  • Fully avalanche rating

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
104A
Drain Source Voltage Vds:
55V
On Resistance Rds(on):
0.008ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2V
Power Dissipation Pd:
200W
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Commercial;
  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Philippines

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002

Alternatives

MOSFET Transistor, N Channel, 165 A, 60 V, 0.0019 ohm, 10 V, 2.5 V

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