Low

INFINEON  IRLB3813PBF  MOSFET Transistor, N Channel, 260 A, 30 V, 0.0016 ohm, 10 V, 1.9 V

INFINEON IRLB3813PBF
Technical Data Sheet (243.30KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IRLB3813PBF is a HEXFET® N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is optimized for UPS/inverter applications. It is suitable for high frequency isolated DC-to-DC converters with synchronous rectification for telecom use.
  • Ultra-low gate impedance
  • Very low RDS (ON) at 4.5V VGS

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
260A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.0016ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1.9V
Power Dissipation Pd:
230W
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • Power Management;
  • Communications & Networking;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Philippines

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002

Alternatives