Low

INFINEON  IRLL014NPBF  MOSFET Transistor, N Channel, 2 A, 55 V, 140 mohm, 10 V, 2 V

INFINEON IRLL014NPBF
Technical Data Sheet (261.27KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IRLL014NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
  • Dynamic dv/dt rating
  • Fully avalanche rated
  • Advanced process technology
  • Ultra low on-resistance
  • Surface mount

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
2A
Drain Source Voltage Vds:
55V
On Resistance Rds(on):
0.14ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2V
Power Dissipation Pd:
2.1W
Transistor Case Style:
SOT-223
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Y-Ex
Tariff No:
85412900
Weight (kg):
.000218

Alternatives

MOSFET Transistor, N Channel, 3.1 A, 55 V, 65 mohm, 10 V, 2 V

INFINEON

Awaiting Delivery (Available for backorder to lead times shown)

Price for: Each

1+ US$0.807 25+ US$0.667 100+ US$0.42 250+ US$0.334 more…

Buy

Associated Products