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INFINEON  IRLR2905PBF  MOSFET Transistor, N Channel, 42 A, 55 V, 27 mohm, 10 V, 2 V

INFINEON IRLR2905PBF
Technical Data Sheet (314.28KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IRLR2905PBF is a N-channel HEXFET® Power MOSFET. The international rectifier utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapour phase, infrared or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
  • Logic-Level Gate Drive
  • Ultra Low On-Resistance
  • Surface Mount (IRLR2905)
  • Straight Lead (IRLU2905)
  • Advanced Process Technology
  • Fast Switching and Fully Avalanche Rated

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
42A
Drain Source Voltage Vds:
55V
On Resistance Rds(on):
0.027ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2V
Power Dissipation Pd:
110W
Transistor Case Style:
TO-252
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Audio;
  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Mexico

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Y-Ex
Tariff No:
85412900
Weight (kg):
.000605

Associated Products