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NTE ELECTRONICS  NTE2395  MOSFET Transistor, N Channel, 50 A, 60 V, 28 mohm, 10 V, 4 V

NTE ELECTRONICS NTE2395
Technical Data Sheet (62.06KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The NTE2395 is a 60V N-channel enhancement mode Transistor designed for high speed switching applications.
  • Dynamic dv/dt rating
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements
  • ±20V Gate to Source voltage (VGS)
  • 1°C/W Thermal resistance, junction to case
  • 62°C/W Thermal resistance, junction to ambient

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
50A
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
0.028ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
150W
Transistor Case Style:
TO-220
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
To Be Advised

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Applications

  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.004536

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