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NXP  BC856S  Bipolar Transistor Array, General Purpose, Dual PNP, -65 V, 220 mW, -100 mA, 110 hFE, SOT-363

NXP BC856S
Technical Data Sheet (87.18KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BC856S is a dual PNP Bipolar Transistor Array in a very small surface-mount plastic package. It is suitable for general-purpose switching and amplification applications.
  • Low collector capacitance
  • Low collector-emitter saturation voltage
  • Closely matched current gain
  • Reduces number of components and board space
  • No mutual interference between the transistors

Product Information

Transistor Polarity:
Dual PNP
Collector Emitter Voltage V(br)ceo:
-65V
Power Dissipation Pd:
220mW
DC Collector Current:
-100mA
DC Current Gain hFE:
110hFE
Transistor Case Style:
SOT-363
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.000005

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