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NXP  BF722,115  Bipolar (BJT) Single Transistor, NPN, 250 V, 60 MHz, 1.2 W, 100 mA, 50 hFE

NXP BF722,115
Technical Data Sheet (98.13KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BF722,115 is a NPN High Voltage Transistor housed in a plastic package. It offers class-B video output stages of colour television receivers and general purpose high voltage circuits.
  • Low feedback capacitance
  • PNP complement is BF723

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
250V
Transition Frequency ft:
60MHz
Power Dissipation Pd:
1.2W
DC Collector Current:
100mA
DC Current Gain hFE:
50hFE
Transistor Case Style:
SOT-223
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Communications & Networking;
  • Imaging, Video & Vision;
  • Signal Processing;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000073