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NXP  BFG198,115  Bipolar - RF Transistor, NPN, 10 V, 8 GHz, 1 W, 100 mA, 90 hFE

NXP BFG198,115
Manufacturer:
NXP NXP
Manufacturer Part No:
BFG198,115
Order Code:
1758042
Technical Datasheet:
See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BFG198,115 is a NPN epitaxial planar Wideband Transistor in a plastic envelope, intended for wideband amplifier applications. The device offers a high gain and excellent output voltage capabilities.

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
10V
Transition Frequency ft:
8GHz
Power Dissipation Pd:
1W
DC Collector Current:
100mA
DC Current Gain hFE:
90hFE
RF Transistor Case:
SOT-223
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial
  • Power Management

Legislation and Environmental

Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000214