Low

NXP  BFG198,115  Bipolar - RF Transistor, NPN, 10 V, 8 GHz, 1 W, 100 mA, 90 hFE

NXP BFG198,115
Technical Data Sheet (293.76KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BFG198,115 is a NPN epitaxial planar Wideband Transistor in a plastic envelope, intended for wideband amplifier applications. The device offers a high gain and excellent output voltage capabilities.

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
10V
Transition Frequency ft:
8GHz
Power Dissipation Pd:
1W
DC Collector Current:
100mA
DC Current Gain hFE:
90hFE
RF Transistor Case:
SOT-223
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000214