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BFG21W,115 - 

Bipolar - RF Transistor, NPN, 4.5 V, 18 GHz, 600 mW, 500 mA, 40 hFE

BFG21W,115 - Bipolar - RF Transistor, NPN, 4.5 V, 18 GHz, 600 mW, 500 mA, 40 hFE

Image is for illustrative purposes only. Please refer to product description.

Manufacturer:
NXP NXP
Manufacturer Part No:
BFG21W,115
Order Code:
1758043
Technical Datasheet:
(EN)
See all Technical Docs

Product Overview

The BFG21W,115 is an NPN Double Polysilicon Bipolar Power Transistor with buried layer for low voltage medium power applications encapsulated in a plastic, 4-pin dual-emitter SOT343R package. This UHF power transistor is suitable for linear and non-linear operations.
  • High power gain
  • High efficiency

Applications

RF Communications

Product Information

:
NPN
:
4.5V
:
18GHz
:
600mW
:
500mA
:
40hFE
:
SOT-343R
:
3Pins
:
150°C
:
-
:
-
:
MSL 1 - Unlimited
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Packaging type Cut Tape
  Additional packaging options available
Re-reel (minimum 10/reel):1758043RL Check stock

No Longer Manufactured

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