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NXP  BFT25A,215  Bipolar - RF Transistor, NPN, 5 V, 5 GHz, 32 mW, 6.5 mA, 80 hFE

NXP BFT25A,215
Technical Data Sheet (139.68KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BFT25A,215 is a NPN Wideband Transistor encapsulated in a plastic package. It is primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up to 2GHz.
  • Low noise figure
  • Low current consumption
  • Gold metallization ensures excellent reliability

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
5V
Transition Frequency ft:
5GHz
Power Dissipation Pd:
32mW
DC Collector Current:
6.5mA
DC Current Gain hFE:
80hFE
RF Transistor Case:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • RF Communications;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000006