Low

NXP  BSH105,215  MOSFET Transistor, N Channel, 1.05 A, 20 V, 0.14 ohm, 4.5 V, 570 mV

NXP BSH105,215
Technical Data Sheet (110.46KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BSH105,215 is a N-channel enhancement mode Field-Effect Transistor in a plastic package using vertical D-MOS technology. Suitable for high frequency applications due to fast switching characteristics.
  • Logic-level compatible
  • Very fast switching
  • Low threshold voltage

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
1.05A
Drain Source Voltage Vds:
20V
On Resistance Rds(on):
0.14ohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
570mV
Power Dissipation Pd:
417mW
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Computers & Computer Peripherals;
  • Communications & Networking;
  • Consumer Electronics

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000006