Low

NXP  BSH207,135  MOSFET Transistor, P Channel, -1 A, -12 V, 0.08 ohm, -4.5 V, -600 mV

NXP BSH207,135
Technical Data Sheet (117.40KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BSH207,135 is a P-channel enhancement-mode Power MOS Transistor housed subminiature surface-mount package. The device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing.
  • Very low threshold
  • Fast switching
  • Logic level compatible
  • -55 to 150°C Operating junction temperature range

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-1A
Drain Source Voltage Vds:
-12V
On Resistance Rds(on):
0.08ohm
Rds(on) Test Voltage Vgs:
-4.5V
Threshold Voltage Vgs:
-600mV
Power Dissipation Pd:
417mW
Transistor Case Style:
SOT-457
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000006