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NXP  BSP122,115  MOSFET Transistor, N Channel, 750 mA, 200 V, 1.7 ohm, 10 V, 2 V

NXP BSP122,115
Technical Data Sheet (54.95KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BSP122,115 is a N-channel enhancement-mode vertical D-MOS Transistor housed in a surface-mount package. It is intended for use as a line current interrupter in telephone sets and for applications in relay, high-speed and line transformer drivers.
  • Direct interface to C-MOS, TTL
  • High-speed switching
  • No secondary breakdown

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
750mA
Drain Source Voltage Vds:
200V
On Resistance Rds(on):
1.7ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2V
Power Dissipation Pd:
1.5W
Transistor Case Style:
SOT-223
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Communications & Networking;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00023