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NXP  BSP19,115  Bipolar (BJT) Single Transistor, NPN, 350 V, 70 MHz, 1.2 W, 100 mA, 40 hFE

NXP BSP19,115
Technical Data Sheet (95.25KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BSP19,115 is a NPN High Voltage Transistor housed in a plastic package. It is suitable for use with the switching and amplification, especially used in telephony and automotive applications.
  • Low current
  • PNP complement is BSP16

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
350V
Transition Frequency ft:
70MHz
Power Dissipation Pd:
1.2W
DC Collector Current:
100mA
DC Current Gain hFE:
40hFE
Transistor Case Style:
SOT-223
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Communications & Networking;
  • Automotive;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000006