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NXP  BSP220,115  MOSFET Transistor, P Channel, -200 mA, -200 V, 10 ohm, -10 V, -2.8 V

NXP BSP220,115
Technical Data Sheet (65.15KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BSP220,115 is a P-channel enhancement-mode vertical D-MOS Transistor in a miniature envelope. It is intended for use in relay, high-speed and line transformer drivers.
  • Low RDS (ON)
  • Direct interface to C-MOS, TTL
  • High-speed switching
  • No secondary breakdown

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-200mA
Drain Source Voltage Vds:
-200V
On Resistance Rds(on):
10ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-2.8V
Power Dissipation Pd:
1.5W
Transistor Case Style:
SOT-223
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85423990
Weight (kg):
.000227