Low

NXP  BSP33,115  Bipolar (BJT) Single Transistor, PNP, -80 V, 100 MHz, 1.3 W, -1 A, 100 hFE

NXP BSP33,115
Technical Data Sheet (118.76KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BSP33,115 is a PNP Medium Power Transistor housed in a plastic package. It is suitable for use with the telephony and general industrial applications.
  • High current
  • Low voltage
  • NPN complements are BSP41 and BSP43

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-80V
Transition Frequency ft:
100MHz
Power Dissipation Pd:
1.3W
DC Collector Current:
-1A
DC Current Gain hFE:
100hFE
Transistor Case Style:
SOT-223
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Communications & Networking;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000269