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NXP  BSP62,115  Bipolar (BJT) Single Transistor, PNP, -80 V, 200 MHz, 1.25 W, -1 A, 2000 hFE

NXP BSP62,115
Technical Data Sheet (120.36KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BSP62,115 is a PNP Darlington Transistor housed in a plastic package. It is suitable for use with the industrial switching applications such as print hammer, solenoid, relay and lamp drivers.
  • High current
  • Low voltage
  • Integrated diode and resistor
  • NPN complements are BSP50, BSP51 and BSP52

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-80V
Transition Frequency ft:
200MHz
Power Dissipation Pd:
1.25W
DC Collector Current:
-1A
DC Current Gain hFE:
2000hFE
Transistor Case Style:
SOT-223
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Consumer Electronics;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000226