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NXP  BSP89,115  MOSFET Transistor, N Channel, 340 mA, 240 V, 2.8 ohm, 10 V, 2 V

NXP BSP89,115
Technical Data Sheet (55.91KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BSP89,115 is a N-channel enhancement-mode logic level FET in a plastic package using vertical D-MOS technology. It is intended for use as a surface-mount device in line current interrupters in telephone sets and for application in relay, high speed and line transformer drivers.
  • Direct interface to Complementary (C-MOS) transistor and Transistor-Transistor Logic (TTL) devices
  • Very fast switching
  • No secondary breakdown

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
340mA
Drain Source Voltage Vds:
240V
On Resistance Rds(on):
2.8ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2V
Power Dissipation Pd:
1.5W
Transistor Case Style:
SOT-223
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Communications & Networking;
  • Computers & Computer Peripherals;
  • Consumer Electronics;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000151