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NXP  BSS192,115  MOSFET Transistor, P Channel, -200 mA, -240 V, 12 ohm, -10 V, -2.8 V

NXP BSS192,115
Technical Data Sheet (255.57KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BSS192,115 is a P-channel enhancement-mode vertical double-diffused FET in a medium power and flat lead surface-mount plastic package. The DMOSFET is suitable for relay driver, high-speed line driver, high -side load switch and switching circuit applications.
  • Direct interface to Complementary (C-MOS) transistor and Transistor-Transistor Logic (TTL) devices
  • Very fast switching
  • No secondary breakdown
  • -55 to 150°C Junction temperature range

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-200mA
Drain Source Voltage Vds:
-240V
On Resistance Rds(on):
12ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-2.8V
Power Dissipation Pd:
1W
Transistor Case Style:
SOT-89
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Hong Kong

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000109

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MOSFET Transistor, P Channel, -190 mA, -250 V, 7.7 ohm, -10 V, -1.5 V

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