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NXP  BSS87,115  MOSFET Transistor, N Channel, 400 mA, 200 V, 1.6 ohm, 10 V, 2.8 V

NXP BSS87,115
Technical Data Sheet (247.02KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BSS87,115 is a N-channel enhancement-mode vertical double-diffused FET in a medium power and flat lead surface-mount plastic package. The DMOSFET is suitable for relay driver, high-speed line driver, load-side load-switch and switching circuit applications.
  • Direct interface to Complementary (C-MOS) transistor and Transistor-Transistor Logic (TTL) devices
  • Very fast switching
  • No secondary breakdown
  • -55 to 150°C Junction temperature range

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
400mA
Drain Source Voltage Vds:
200V
On Resistance Rds(on):
1.6ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2.8V
Power Dissipation Pd:
1W
Transistor Case Style:
SOT-89
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Hong Kong

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00054