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NXP  BUK6C2R1-55C  MOSFET Transistor, N Channel, 228 A, 55 V, 0.0023 ohm, 10 V, 2.3 V

NXP BUK6C2R1-55C
Technical Data Sheet (185.52KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BUK6C2R1-55C is a N-channel enhancement-mode intermediate level gate drive FET in a plastic package using advanced TrenchMOS® technology. The device has been designed and qualified to the appropriate AEC-Q101 standard for use in high performance automotive applications.
  • High current handling capability up to 320A
  • Low conduction losses due to very low ON-state resistance
  • Suitable for standard and logic level gate drive sources
  • Suitable for thermally demanding environments due to 175°C rating

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
228A
Drain Source Voltage Vds:
55V
On Resistance Rds(on):
0.0023ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2.3V
Power Dissipation Pd:
300W
Transistor Case Style:
TO-263
No. of Pins:
7Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Automotive;
  • Power Management;
  • Motor Drive & Control;
  • Lighting;
  • Automation & Process Control;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Philippines

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Y-Ex
Tariff No:
85412900
Weight (kg):
.001563

Associated Products