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NXP  BUK9Y14-40B  MOSFET Transistor, N Channel, 56 A, 40 V, 11 mohm, 10 V, 1.5 V

NXP BUK9Y14-40B
Technical Data Sheet (189.94KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BUK9Y14-40B is a N-channel enhancement-mode logic level FET in a plastic package using high performance automotive (HPA) TrenchMOS® technology. The device has been designed and qualified to the appropriate AEC-Q101 standard for use in automotive critical applications.
  • Low conduction losses due to low ON-state resistance
  • Suitable for logic level gate drive sources
  • Suitable for thermally demanding environments due to 175°C rating
  • -55 to 175°C Junction temperature range

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
56A
Drain Source Voltage Vds:
40V
On Resistance Rds(on):
0.011ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1.5V
Power Dissipation Pd:
85W
Transistor Case Style:
SOT-669
No. of Pins:
4Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Automotive;
  • Power Management;
  • Motor Drive & Control;
  • Lighting;
  • Automation & Process Control;
  • Mining, Oil & Gas;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Philippines

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Y-Ex
Tariff No:
85412900
Weight (kg):
.000896