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NXP  PBSS302NX,115  Bipolar (BJT) Single Transistor, NPN, 20 V, 140 MHz, 600 mW, 5.3 A, 570 hFE

NXP PBSS302NX,115
Technical Data Sheet (188.82KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
20V
Transition Frequency ft:
140MHz
Power Dissipation Pd:
600mW
DC Collector Current:
5.3A
DC Current Gain hFE:
570hFE
Transistor Case Style:
SOT-89
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Hong Kong

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.000162