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NXP  PBSS306NZ,135  Bipolar (BJT) Single Transistor, NPN, 100 V, 110 MHz, 700 mW, 5.1 A, 30 hFE

NXP PBSS306NZ,135
Technical Data Sheet (186.24KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The PBSS306NZ,135 is a 5.1A NPN breakthrough-in small signal (BISS) Transistor in a small surface-mount plastic package with increased heat-sink.
  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required printed-circuit board (PCB) area than for conventional transistors
  • PNP complement is PBSS306PZ
  • S306NZ Marking code

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
100V
Transition Frequency ft:
110MHz
Power Dissipation Pd:
700mW
DC Collector Current:
5.1A
DC Current Gain hFE:
30hFE
Transistor Case Style:
SOT-223
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Motor Drive & Control;
  • Automotive;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.000147