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NEXPERIA  PBSS306NZ,135  Bipolar (BJT) Single Transistor, NPN, 100 V, 110 MHz, 700 mW, 5.1 A, 30 hFE

NEXPERIA PBSS306NZ,135
Manufacturer:
NEXPERIA NEXPERIA
Manufacturer Part No:
PBSS306NZ,135
Order Code:
1757954
Technical Datasheet:
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Image is for illustrative purposes only. Please refer to product description.

Product Overview

The PBSS306NZ,135 is a 5.1A NPN breakthrough-in small signal (BISS) Transistor in a small surface-mount plastic package with increased heat-sink.
  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required printed-circuit board (PCB) area than for conventional transistors
  • PNP complement is PBSS306PZ
  • S306NZ Marking code

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
100V
Transition Frequency ft:
110MHz
Power Dissipation Pd:
700mW
DC Collector Current:
5.1A
DC Current Gain hFE:
30hFE
Transistor Case Style:
SOT-223
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial
  • Motor Drive & Control
  • Automotive
  • Power Management

Legislation and Environmental

Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.000147