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PBSS306PX,115 - 

Bipolar (BJT) Single Transistor, PNP, -100 V, 100 MHz, 600 mW, -3.7 A, 300 hFE

PBSS306PX,115 - Bipolar (BJT) Single Transistor, PNP, -100 V, 100 MHz, 600 mW, -3.7 A, 300 hFE

Image is for illustrative purposes only. Please refer to product description.

Manufacturer:
NEXPERIA NEXPERIA
Manufacturer Part No:
PBSS306PX,115
Order Code:
1757955
Technical Datasheet:
(EN)
See all Technical Docs

Product Overview

The PBSS306PX,115 is a 3.7A PNP breakthrough-in small signal (BISS) Transistor in a small and flat lead surface-mount plastic package. It offers collector pad for good heat transfer.
  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required printed-circuit board (PCB) area than for conventional transistors
  • NPN complement is PBSS306NX
  • 5N Marking code

Applications

Industrial, Motor Drive & Control, Automotive, Power Management

Product Information

:
PNP
:
-100V
:
100MHz
:
600mW
:
-3.7A
:
300hFE
:
SOT-89
:
3Pins
:
150°C
:
-
:
-
:
MSL 1 - Unlimited
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1,000 will be available for delivery on Dec 27, 2017

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