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NXP  PBSS306PZ,135  Bipolar (BJT) Single Transistor, PNP, -100 V, 100 MHz, 700 mW, -4.1 A, 300 hFE

NXP PBSS306PZ,135
Technical Data Sheet (196.80KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The PBSS306PZ,135 is a 4.1A PNP breakthrough-in small signal (BISS) Transistor in a small surface-mount plastic package with increases heat-sink.
  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller printed-circuit board (PCB) area than for conventional transistors
  • AEC-Q101 qualified
  • NPN complement is PBSS306NZ
  • S306PZ Marking code

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-100V
Transition Frequency ft:
100MHz
Power Dissipation Pd:
700mW
DC Collector Current:
-4.1A
DC Current Gain hFE:
300hFE
Transistor Case Style:
SOT-223
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Motor Drive & Control;
  • Automotive;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000156