Low

PBSS306PZ,135 - 

Bipolar (BJT) Single Transistor, PNP, -100 V, 100 MHz, 700 mW, -4.1 A, 300 hFE

NEXPERIA PBSS306PZ,135

Image is for illustrative purposes only. Please refer to product description.

Manufacturer:
NEXPERIA NEXPERIA
Manufacturer Part No:
PBSS306PZ,135
Order Code:
1757956
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
700mW
:
-4.1A
:
-100V
:
100MHz
:
150°C
:
PNP
:
300hFE
:
4Pins
:
-
:
-
:
SOT-223
:
MSL 1 - Unlimited
Find similar products Choose and modify the attributes above to find similar products.

Product Overview

The PBSS306PZ,135 is a 4.1A PNP breakthrough-in small signal (BISS) Transistor in a small surface-mount plastic package with increases heat-sink.
  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller printed-circuit board (PCB) area than for conventional transistors
  • AEC-Q101 qualified
  • NPN complement is PBSS306NZ
  • S306PZ Marking code

Applications

Industrial, Motor Drive & Control, Automotive, Power Management