Low

NXP  PBSS4130PAN  Bipolar (BJT) Single Transistor, Dual NPN, 30 V, 165 MHz, 2 W, 1 A, 180 hFE

NXP PBSS4130PAN
Technical Data Sheet (270.63KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
Dual NPN
Collector Emitter Voltage V(br)ceo:
30V
Transition Frequency ft:
165MHz
Power Dissipation Pd:
2W
DC Collector Current:
1A
DC Current Gain hFE:
180hFE
Transistor Case Style:
SOT-1118
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000002