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NXP  PBSS8110X  Bipolar (BJT) Single Transistor, NPN, 100 V, 100 MHz, 2 W, 1 A, 150 hFE

NXP PBSS8110X
Technical Data Sheet (205.82KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The PBSS8110X is a 1A NPN breakthrough-in small signal (BISS) Transistor housed in a surface-mount plastic package. It offers collector pad for good heat transfer.
  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High efficiency leading to less heat generation
  • PNP complement is PBSS9110X
  • 4B Marking code

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
100V
Transition Frequency ft:
100MHz
Power Dissipation Pd:
2W
DC Collector Current:
1A
DC Current Gain hFE:
150hFE
Transistor Case Style:
SOT-89
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Automotive;
  • Communications & Networking;
  • Motor Drive & Control;
  • Signal Processing;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Hong Kong

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000104