Bipolar (BJT) Single Transistor, NPN, 100 V, 100 MHz, 2 W, 1 A, 150 hFE
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- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High efficiency leading to less heat generation
- PNP complement is PBSS9110X
- 4B Marking code
Industrial, Automotive, Communications & Networking, Motor Drive & Control, Signal Processing, Power Management