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NXP  PEMD3,115  Bipolar (BJT) Single Transistor, BRT, NPN, PNP, 50 V, 230 MHz, 300 mW, 100 mA, 30 hFE

NXP PEMD3,115
Technical Data Sheet (980.77KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The PEMD3,115 is a 10kR NPN-PNP Resistor Equipped Transistor (RET) in an ultra-small and flat lead surface-mount plastic package.
  • Reduces component count
  • Built-in bias resistors
  • Reduces pick and place costs
  • Simplifies circuit design
  • AEC-Q101 qualified
  • PNP-PNP complement is PEMB11
  • NPN-NPN complement is PEMH11
  • D3 Marking code

Product Information

Transistor Polarity:
NPN, PNP
Collector Emitter Voltage V(br)ceo:
50V
Transition Frequency ft:
230MHz
Power Dissipation Pd:
300mW
DC Collector Current:
100mA
DC Current Gain hFE:
30hFE
Transistor Case Style:
SOT-666
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Automotive;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Hong Kong

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000006