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NXP  PEMD6,115  Bipolar (BJT) Single Transistor, BRT, NPN, PNP, 50 V, 300 mW, 100 mA, 200 hFE

NXP PEMD6,115
Technical Data Sheet (272.24KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
NPN, PNP
Collector Emitter Voltage V(br)ceo:
50V
Transition Frequency ft:
-
Power Dissipation Pd:
300mW
DC Collector Current:
100mA
DC Current Gain hFE:
200hFE
Transistor Case Style:
SOT-666
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Hong Kong

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000204