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NXP  PEMH4,115  Bipolar (BJT) Single Transistor, BRT, NPN, 50 V, 300 mW, 100 mA, 200 hFE

NXP PEMH4,115
Technical Data Sheet (131.16KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The PEMH4,115 is a 10kR NPN-NPN Resistor Equipped Transistor (RET) in a plastic surface-mount package.
  • Built-in bias resistors
  • Simplified circuit design
  • Reduction of component count
  • Reduced pick and place costs
  • NPN-PNP complement is PEMD4
  • PNP-PNP complement is PEMB4
  • H4 Marking code

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
50V
Transition Frequency ft:
-
Power Dissipation Pd:
300mW
DC Collector Current:
100mA
DC Current Gain hFE:
200hFE
Transistor Case Style:
SOT-666
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Hong Kong

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000006