Low

NEXPERIA  PHN210T,118  Dual MOSFET, Dual N Channel, 2.2 A, 30 V, 0.08 ohm, 10 V, 2 V

NEXPERIA PHN210T,118
Manufacturer:
NEXPERIA NEXPERIA
Manufacturer Part No:
PHN210T,118
Order Code:
1758131
Technical Datasheet:
See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The PHN210T,118 is an intermediate level N-channel enhancement-mode FET in a plastic package using vertical TrenchMOS technology. It is designed and qualified for use in computing, DC-to-DC converters, logic level translators, motor and relay driver applications.
  • Suitable for high frequency applications due to fast switching characteristics
  • Suitable for logic level gate drive sources
  • Suitable for low gate drive sources

Product Information

Transistor Polarity:
Dual N Channel
Continuous Drain Current Id:
2.2A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.08ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2V
Power Dissipation Pd:
2W
Transistor Case Style:
SOIC
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • Industrial
  • Communications & Networking
  • Consumer Electronics
  • Power Management

Legislation and Environmental

Country of Origin:
Thailand

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000454

Alternatives

Dual MOSFET, Dual N Channel, 3.5 A, 30 V, 0.07 ohm, 10 V, 2.5 V

ROHM

100 in stock

Price for: Each (Supplied on Cut Tape)

1+ US$0.706 10+ US$0.593 100+ US$0.381 250+ US$0.332 more…

Buy