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NXP  PMBTA13,215  Bipolar (BJT) Single Transistor, NPN, 30 V, 125 MHz, 250 mW, 500 mA, 10000 hFE

NXP PMBTA13,215
Technical Data Sheet (104.45KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The PMBTA13,215 is a NPN Darlington Transistor housed in a surface-mount plastic package. It is suitable for use with the high input impedance preamplifiers.
  • High current
  • Low voltage
  • High DC current gain
  • PNP complement is PMBTA64
  • 1M Marking code

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
30V
Transition Frequency ft:
125MHz
Power Dissipation Pd:
250mW
DC Collector Current:
500mA
DC Current Gain hFE:
10000hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Communications & Networking;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000272