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NXP  PMDT290UCE  Dual MOSFET, N and P Channel, 800 mA, 20 V, 0.29 ohm, 4.5 V, 750 mV

NXP PMDT290UCE
Technical Data Sheet (242.40KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The PMDT290UCE is a N/P-channel complementary enhancement-mode FET in an ultra small and flat lead surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, low-side load-switch and switching circuit applications.
  • Very fast switching characteristics
  • ESD protection up to 2kV

Product Information

Transistor Polarity:
N and P Channel
Continuous Drain Current Id:
800mA
Drain Source Voltage Vds:
20V
On Resistance Rds(on):
0.29ohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
750mV
Power Dissipation Pd:
330mW
Transistor Case Style:
SOT-666
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000001

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