Low

NXP  PMF170XP  MOSFET Transistor, P Channel, -1 A, -20 V, 0.175 ohm, -4.5 V, -900 mV

NXP PMF170XP
Technical Data Sheet (240.56KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The PMF170XP is a P-channel enhancement mode Field-Effect Transistor with low drain-source on-state resistance and fast switching.
  • Trench MOSFET technology
  • Very fast switching

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-1A
Drain Source Voltage Vds:
-20V
On Resistance Rds(on):
0.175ohm
Rds(on) Test Voltage Vgs:
-4.5V
Threshold Voltage Vgs:
-900mV
Power Dissipation Pd:
290mW
Transistor Case Style:
SOT-323
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000198

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